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參數資料
| 型號： | HCS241DMSR |
| 廠商： | INTERSIL CORP |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| 中文描述： | HC/UH SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP20 |
| 封裝： | SIDE BRAZED, CERAMIC, DIP-20 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 169K |
| 代理商： | HCS241DMSR |
304
Specifications HCS241MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Gates
θ
JA
θ
JC
72
o
C/W
107
o
C/W
24
o
C/W
28
o
C/W
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
μ
A
2, 3
+125
o
C, -55
o
C
-
750
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V
VIN = VCC or GND
1
+25
o
C
-
±
0.5
μ
A
2, 3
+125
o
C, -55
o
C
-
±
5.0
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force
Voltage = 0V or VCC
1
+25
o
C
-
±
1.0
μ
A
2, 3
+125
o
C, -55
o
C
-
±
50
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518838
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| HCS241K | Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS241HMSR | Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS241KMSR | Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS244T | Radiation Hardened Octal Buffer/Line Driver, Three-State(抗輻射八緩沖器/線驅動器（三態）) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HCS241HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS241K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS241KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS241MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Inverting Octal Three-State Buffer/Line Driver |
| HCS244D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Buffer/Line Driver, Three-State |
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