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參數資料
| 型號： | HCS373MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Octal Transparent Latch, Three-State(抗輻射的八透明鎖存器（三態）) |
| 中文描述： | 八路透明鎖存器，三態（抗輻射的八透明鎖存器（三態）） |
| 文件頁數： | 10/10頁 |
| 文件大小： | 183K |
| 代理商： | HCS373MS |
355
HCS373MS
Die Characteristics
DIE DIMENSIONS:
2747 x 2693
μ
m
METALLIZATION:
Type: SiAl
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 x 4 mils
Metallization Mask Layout
HCS373MS
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCS373 is TA14303A.
OE
(1)
Q0
(2)
D1 (4)
Q1 (5)
D2 (7)
Q3
(9)
GND
(10)
Q4
(12)
(15) Q5
(16) Q6
(17) D6
(18) D7
Q7
(19)
VCC
(20)
(14) D5
D0
(3)
Q2 (6)
(8)
D3
(11)
LE
D4
(13)
Spec Number
518845
相關PDF資料 |
PDF描述 |
|---|---|
| HCS373T | Radiation Hardened Octal Three-State Transparent Latch(抗輻射八透明鎖存器) |
| HCS373DTR | Radiation Hardened Octal Transparent Latch, Three-State |
| HCS373KTR | Radiation Hardened Octal Transparent Latch, Three-State |
| HCT04 | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,47.8V V(RWM),Axial-9.5 |
| HCT10 | Triple 3-Input NAND Gate(High-Performance Silicon-Gate CMOS) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HCS373T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Transparent Latch, Three-State |
| HCS374D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374D/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
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