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參數資料
| 型號： | HER608-T3 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 6.0A HIGH EFFICIENCY RECTIFIER |
| 中文描述： | 6.0a下高速整流二極管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | HER608-T3 |
HER601 – HER608
1 of 3 2002 Won-Top Electronics
HER601 – HER608
6.0A HIGH EFFICIENCY RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
C
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 2.1 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Epoxy: UL 94V-O rate flame retardant
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
HER
601
HER
602
HER
603
HER
604
HER
605
HER
606
HER
607
HER
608
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
300
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
210
280
420
560
700
V
Average Rectified Output Current
(Note 1) @T
A
= 55°C
I
O
6.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
200
A
Forward Voltage @I
F
= 6.0A
V
FM
1.0
1.3
1.7
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10.0
100
μA
Reverse Recovery Time (Note 2)
t
rr
50
75
nS
Typical Junction Capacitance (Note 3)
C
j
100
65
pF
Operating Temperature Range
T
j
-65 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
W TE
POWER SEMICONDUCTORS
R-6
Min
25.4
8.60
1.20
8.60
Dim
A
B
C
D
Max
—
9.10
1.30
9.10
All Dimensions in mm
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| HF10-12S | NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HER608-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 1KV 6A 2-Pin Case R-6 T/R 制造商:Micro Commercial Components (MCC) 功能描述:6A 1000V r-6 STD RECTIFIER |
| HER6G | 制造商:GOOD-ARK 制造商全稱:GOOD-ARK Electronics 功能描述:MINIATURE HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER |
| HER7G | 制造商:GOOD-ARK 制造商全稱:GOOD-ARK Electronics 功能描述:MINIATURE HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER |
| HER801 | 功能描述:整流器 8A 50V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HER801FT | 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:GLASS HIGH EFFICIENCY RECTIFIERS |
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