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參數資料
| 型號： | HFA3102B96 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | XC95216-20HQ208I - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB |
| 封裝： | MS-012AB, 14 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | HFA3102B96 |
3-449
HFA3102
Dual Long-Tailed Pair Transistor Array
The HFA3102 is an all NPN transistor array configured as
dual differential amplifiers with tail transistors. Based on
Intersil bonded wafer UHF-1 SOI process, this array
achieves very high f
T
(10GHz) while maintaining excellent
h
FE
and V
BE
matching characteristics over temperature.
Collector leakage currents are maintained to under 0.01nA.
Pinout/Functional Diagram
HFA3102
(SOIC)
TOP VIEW
Features
High Gain-Bandwidth Product (f
T
) . . . . . . . . . . . . . 10GHz
High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz
High Current Gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . 70
Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB
Low Collector Leakage Current . . . . . . . . . . . . . <0.01nA
Excellent h
FE
and V
BE
Matching
Pin-to-Pin to UPA102G
Applications
Single Balanced Mixers
Wide Band Amplification Stages
Differential Amplifiers
Multipliers
Automatic Gain Control Circuits
Frequency Doublers, Tripplers
Oscillators
Constant Current Sources
Wireless Communication Systems
Radio and Satellite Communications
Fiber Optic Signal Processing
High Performance Instrumentation
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
HFA3102B
-40 to 85
14 Ld SOIC
M14.15
HFA3102B96
-40 to 85
14 Ld SOIC Tape
and Reel
M14.15
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Q
1
Q
2
Q
3
Q
4
Q
5
Q
6
Data Sheet
August 1996
File Number
3635.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
|---|---|
| HFA3127 | XC95216-20PQ160C - NOT RECOMMENDED for NEW DESIGN |
| HFA3128 | XC95216-20PQ160I - NOT RECOMMENDED for NEW DESIGN |
| HFA3096 | Ultra High Frequency Transistor Arrays |
| HFA3128B | Ultra High Frequency Transistor Arrays |
| HFA3127B | Ultra High Frequency Transistor Arrays |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HFA3102BZ | 功能描述:射頻雙極小信號晶體管 W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 14 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3102BZ96 | 功能描述:射頻雙極小信號晶體管 W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 15 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3127 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Transistor Array |
| HFA3127/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Transistor Array |
| HFA3127B | 功能描述:IC TRANSISTOR ARRAY NPN 16-SOIC RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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