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參數(shù)資料
| 型號： | HGT1N40N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 152K |
| 代理商： | HGT1N40N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
o
C and 150
o
C. This
Formerly Developmental Type TA49349.
Features
100kHz Operation At 390V, 22A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
Low Conduction Loss
Symbol
Packaging
JEDEC STYLE SOT-227B
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
C
E
G
GATE
COLLECTOR
EMITTER
EMITTER
TAB
(ISOLATED)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
December 2001
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