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參數資料
| 型號： | HGT1S12N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 112K |
| 代理商： | HGT1S12N60B3S |
1
File Number
4410.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP12N60B3, HGT1S12N60B3S
27A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60B3 and HGT1S12N60B3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49171.
Symbol
Features
27A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60B3
TO-220AB
G12N60B3
HGT1S12N60B3S
TO-263AB
G12N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S12N60B3S9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
相關PDF資料 |
PDF描述 |
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| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S1N120BNDS | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S12N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3DRS | 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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