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參數資料
| 型號： | HGT1S20N35G3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | TO-262AA, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 106K |
| 代理商： | HGT1S20N35G3VL |
3-66
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
EMITTER
GATE
COLLECTOR
(FLANGE)
GATE
R
2
R
1
COLLECTOR
EMITTER
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
PACKAGING AVAILABILITY
The development type number for this device is TA49076.
PART NUMBER
PACKAGE
BRAND
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
April 1995
File Number
4006
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±
10
26
18
775
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1k
. . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . I
SCIS
At L = 2.3mH, T
C
= +175
o
C . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
Power Dissipation Total At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
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| HGT1S20N35G3VLS | 功能描述:IGBT 晶體管 Coil Dr 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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