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參數資料
| 型號： | HGTD2N120BNS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數： | 4/7頁 |
| 文件大小： | 85K |
| 代理商： | HGTD2N120BNS |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
6
5
6
7
8
10
250
μ
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
4
2
4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
6
8
0
1
2
3
4
7
2
10
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
250
μ
s PULSE TEST
5
6
E
O
,
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1.0
1
0
2.0
2
0
4
5
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
0.5
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
3
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
1
0
200
100
400
3
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
4
5
250
350
150
50
2
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
15
20
25
35
40
1
45
4
5
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
3
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
20
15
4
0
3
1
5
30
40
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
5
25
35
2
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
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| HGTD2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
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