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參數資料
| 型號： | HGTD6N50E1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 7.5 A, 500 V, N-CHANNEL IGBT, TO-251AA |
| 文件頁數： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | HGTD6N50E1 |
1970
HGTD6N40E1, HGTD6N40E1S,
HGTD6N50E1, HGTD6N50E1S
6A, 400V and 500V N-Channel IGBTs
Features
6A, 400V and 500V
V
CE(ON)
: 2.5V Max.
T
FALL
: 1.0
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and
HGTD6N50E1S are n-channel enhancement-mode insulated
gate bipolar transistors (IGBTs) designed for high voltage, low
on-dissipation applications such as switching regulators and
motor drivers. These types can be operated directly from low
power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD6N40E1
TO-251AA
G6N40E
HGTD6N50E1
TO-251AA
G6N50E
HGTD6N40E1S
TO-252AA
G6N40E
HGTD6N50E1S
TO-252AA
G6N50E
NOTE: When ordering, use the entire part number.
Packages
HGTD6N40E1, HGTD6N50E1
JEDEC TO-251AA
HGTD6N40E1S, HGTD6N50E1S
JEDEC TO-252AA
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD6N40E1
HGTD6N40E1S
400
400
±
20
7.5
6.0
60
0.48
-55 to +150
HGTD6N50E1
HGTD6N50E1S
500
500
±
20
7.5
6.0
60
0.48
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
March 1997
File Number
2413.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTD6N50E1S | 制造商:Rochester Electronics LLC 功能描述: |
| HGTD7N60A4S | 功能描述:IGBT 晶體管 TO-252 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD7N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-252AA |
| HGTD7N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD7N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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