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參數(shù)資料
| 型號： | HGTG20N100D2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 1000V N-Channel IGBT |
| 中文描述： | 34 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 36K |
| 代理商： | HGTG20N100D2 |
3-93
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG20N100D2
20A, 1000V N-Channel IGBT
Features
34A, 1000V
Latch Free Operation
Typical Fall Time 520ns
High Input Impedance
Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
o
C and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N100D2
TO-247
G20N100D2
May 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG20N100D2
1000
1000
34
20
100
±
20
±
30
100A at 0.8 BV
CES
150
1.20
-55 to +150
260
UNITS
V
V
A
A
A
V
V
-
W
W/
o
C
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
= 600V, T
C
= +125
o
C, R
GE
= 25
.
3
μ
s
μ
s
15
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
E
G
File Number
2826.3
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