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參數資料
型號: HGTG24N60D1D
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 3.3V 36-mc CPLD
中文描述: 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數: 2/5頁
文件大小: 35K
代理商: HGTG24N60D1D
3-108
Specifications HGTG24N60D1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 280
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
280
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
5.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
1.7
2.3
V
T
C
= +125
o
C
-
1.9
2.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.3
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
120
155
nC
V
GE
= 20V
-
155
200
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +150
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
700
900
ns
Current Fall Time
t
FI
-
450
600
ns
Turn-Off Energy (Note 1)
W
OFF
-
4.3
-
mJ
Thermal Resistance (IGBT)
R
θ
JC
-
-
1.00
o
C/W
Thermal Resistance Diode
R
θ
JC
-
-
1.50
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 24A
-
-
1.50
V
Diode Reverse Recovery Time
t
RR
I
EC
= 24A, di/dt = 100A/
μ
s
-
-
60
ns
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG24N60D1D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
40
35
30
25
20
15
10
5
0
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 10V
V
GE
= 5.5V
V
GE
= 5.0V
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相關代理商/技術參數
參數描述
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