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參數(shù)資料
| 型號(hào)： | HGTG30N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 144K |
| 代理商： | HGTG30N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
o
C and 150
o
C. The
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
Formerly Developmental Type TA49014.
Symbol
Features
63A, 600V at T
C
= 25
o
C
Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60C3D
TO-247
G30N60C3D
NOTE: When ordering, use the entire part number.
C
E
G
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
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