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參數資料
| 型號： | HGTG30N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 144K |
| 代理商： | HGTG30N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
Diode Reverse Recovery Time
t
rr
I
EC
= 30A, dI
EC
/dt = 100A/
μ
s
-
52
60
ns
I
EC
= 1.0A, dI
EC
/dt = 100A/
μ
s
-
42
50
ns
Thermal Resistance
R
θ
JC
IGBT
-
-
0.6
o
C/W
Diode
-
-
1.3
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
4
6
8
10
12
0
25
50
75
100
125
150
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10.0V
9.5V
9.0V
8.5V
25
50
75
100
125
150
7.0V
7.5V
8.0V
12.0V
V
GE
= 15.0V
I
C
,
0
25
50
0
1
2
3
4
5
75
100
125
150
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 150
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
25
50
75
125
150
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
V
GE
= 15V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
HGTG30N60C3D
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