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參數(shù)資料
| 型號： | HGTG40N60B3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N溝道絕緣柵雙極晶體管) |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 76K |
| 代理商： | HGTG40N60B3 |
4
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
50
100
150
200
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
0
1
2
3
4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
100
150
200
E
O
,
20
12
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
16
8
4
0
80
60
40
20
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
100
2
4
6
8
0
80
60
40
20
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V AND 15V
T
J
= 25
o
C; V
GE
= 10V AND 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
30
40
20
60
80
100
40
50
60
70
80
90
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
20
100
300
200
400
500
0
600
40
60
80
100
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C AND 150
o
C,
V
GE
= 10V AND 15V
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V
HGTG40N60B3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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