- 您現在的位置：買賣IC網 > PDF目錄384406 > HGTG5N120BND (FAIRCHILD SEMICONDUCTOR CORP) 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes PDF資料下載
參數資料
| 型號： | HGTG5N120BND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 216K |
| 代理商： | HGTG5N120BND |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The Diode used is the development type TA49058
(Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49306.
Symbol
Features
21A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance
SPICE Model
Temperature Compensating
SABER Model
www.fairchildsemi.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG5N120BND
TO-247
5N120BND
HGTP5N120BND
TO-220AB
5N120BND
NOTE: When ordering, use the entire part number. i.e.,
HGTG5N120BND.
E
G
C
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
C
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
May 2003
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP10N50C1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP10N50E1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
| HGTP10N40C1D | CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| HGTP10N40F1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTG5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG7N60A4D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
發布緊急采購，3分鐘左右您將得到回復。