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參數資料
| 型號： | HGTP3N60C3D |
| 廠商： | Harris Corporation |
| 英文描述： | 3.3V 72-mc CPLD |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 327K |
| 代理商： | HGTP3N60C3D |
S E M I C O N D U C T O R
3-9
HGTP3N60C3D, HGT1S3N60C3D,
HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Packaging
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP3N60C3D
TO-220AB
G3N60C3D
HGT1S3N60C3D
TO-262AA
G3N60C3D
HGT1S3N60C3DS
TO-263AB
G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
Formerly Developmental Type TA49119.
GATE
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
COLLECTOR
(FLANGE)
GATE
EMITTER
C
E
G
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
UNITS
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 82
.
6
3
A
A
A
V
V
24
±
20
±
30
18A at 480V
33
0.27
-40 to 150
260
8
W
W/
o
C
o
C
o
C
μ
s
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
4140.1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTP3N60C3D_07 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP5N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGTP5N120BND | 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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