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參數資料
| 型號： | HIP0063AB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hex Low Side MOSFET Driver with Serial or Parallel Interface and Diagnostic Fault Control |
| 中文描述： | 0.0044 A 6 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO28 |
| 封裝： | PLASTIC, MS-013-AE, SOIC-28 |
| 文件頁數： | 4/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | HIP0063AB |
4
Specifications HIP0063
GATE DRIVE OUTPUT
Gate Drive Output Source Current
I
GOH
V
G
= 0V
-4.4
-
-0.5
mA
Gate Drive Output Sink Current
I
GOL
V
G
= 4.5V
0.2
-
3.3
mA
Gate Drive Rise Time with Load
t
R
Cap. Load, Gate to GND = (TBD)pF
TBD
TBD
-
μ
s
Output Turn-ON Delay, Rising Edge
of CS to 10% of V
G
Turn-ON
t
PHL
-
5
10
μ
s
Output Turn-OFF Delay, Rising Edge
of CS to 10% of V
G
Turn-OFF
t
PLH
-
5
10
μ
s
DRAIN MONITOR INPUT AND PROTECTION
D0-5 Drain Monitor Clamp Voltage
V
DM
D0-5 Clamp Current, I
DM
= 2mA;
t
PW
=100
μ
s, Duty Cycle <1%, Gate Drive
Voltage, V
G
Low (Note 2)
58
64
74
V
D0-5 Drain Monitor Pulldown Current
Sink
I
DM
0.3V
CC
< V
DM
< V
CC
3
10
25
μ
A
Fault Threshold Voltage Sensed at
the Drain Monitor Input, Shorts/Opens
V
DM_FTH
0.3V
CC
0.4V
CC
0.5V
CC
V
Short Circuit Sense Fault Time
V
DM
> V
DM_FTH
, Gate ON/High
t
SC_ON
T
A
= -40
o
C to 25
o
C
T
A
= 25
o
C to 150
o
C
T
A
= -40
o
C to 25
o
C
T
A
= 25
o
C to 150
o
C
18
28
39
μ
s
19
28
36
μ
s
Over-Current Refresh Time During
Short Circuit (Gate Drive OFF)
t
SC_REF
11.4
16.4
21.4
ms
12.0
16.4
19.6
ms
Over-Current ON Time Duty Cycle
Duty Cycle = t
SC
/(t
SC
+ t
REF
)
0.31
0.34
0.37
%
Open-Load “OFF” Sense Time
V
DM
< V
DM_FTH
, Gate OFF/Low
t
OL_OFF
18
28
39
μ
s
NOTE:
1. Refer the Figure 3 recommended application circuit for V
PWR
protection given system power supply conditions of +24V for double bat-
tery voltage, -14V for reverse battery voltage and +80V system level load dump voltages.
2. V
DM
refers to the specified Drain Monitor voltage input at pins D0 thru D5, that monitor the drain status from the respective external
MOSFET.
3. V
G
refers to the specified Gate Drive voltage at the output pins, G0 thru G5, that drive the Gate of the respective external MOSFET.
FIGURE 3. TYPICAL APPLICATION CIRCUIT FOR THE HIP0063 SHOWING THE V
PWR
SUPPLY INTERFACE WITH CIRCUIT PRO-
TECTION COMPONENTS. FOR THE VALUES SHOWN, GIVEN A LOAD DUMP OF 80V THAT DECAYS TO THE V
PWR
LEVEL IN 350ms, THE 27V ZENER DIODE IS REQUIRED TO CLAMP THE TRANSIENT TO 60V MAXIMUM. FOR THE
REVERSE BATTERY PROTECTION, THE ZENER DIODE CLAMPS NEGATIVE VOLTAGES
Electrical Specifications
V
CC
= 4.5V to 5.5V, V
PWR
= 5.5V to 17V, T
A
= -40
o
C to +125
o
C, Unless Otherwise Specified
(Continued)
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
HLOS
HPW01
HPW45
PI0
PI1
PI2
PI3
PI4
PI5
CS
SI
SCK
V
PWR
D0
G0
G1
G2
D1
D2
D3
G3
G4
D4
G5
SO
D5
GND
V
CC
HARDWARE
GENERATED
PWM INPUT
SPI BUS
SERIAL
INPUT
CHIP SELECT
HIGH SPEED
PARALLEL
DATA INPUT
+5V
0.01
μ
F
PWM SELECT
V
BATT
ONE OF SIX
OUTPUTS
27V
0.01
μ
F
0.01
μ
F
LOAD:
13
, 6.8
μ
H
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