欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: HIP6602ACR
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述: 0.73 A HALF BRDG BASED MOSFET DRIVER, PQCC16
封裝: PLASTIC, MO-220VHHB, MLFP-16
文件頁數: 4/10頁
文件大小: 250K
代理商: HIP6602ACR
4
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
) . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (VPWM). . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . . . .V
PHASE
- 0.3V to V
BOOT
+ 0.3V
LGATE. . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V
PVCC
+ 0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V
Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0°C to 85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . .125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
Thermal Resistance
SOIC Package (Note 1) . . . . . . . . . . . .
QFN Package (Note 2). . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300°C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(°C/W)
68
36
θ
JC
(°C/W)
NA
6
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
I
PVCC
f
PWM
= 500kHz, V
PVCC
= 12V
f
PWM
= 500kHz, V
PVCC
= 12V
-
3.7
5.0
mA
Power Supply Current
-
2.0
4.0
mA
POWER-ON RESET
VCC Rising Threshold
9.7
9.95
10.4
V
VCC Falling Threshold
9.0
9.2
9.5
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 0 or 5V (See Block Diagram)
V
PVCC
= 12V
V
PVCC
= 12V
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
-
500
-
μ
A
PWM Rising Threshold
3.45
3.6
-
V
PWM Falling Threshold
-
1.45
1.55
V
UGATE Rise Time
TR
UGATE
TR
LGATE
TF
UGATE
TF
LGATE
TPDL
UGATE
TPDL
LGATE
-
20
-
ns
LGATE Rise Time
-
50
-
ns
UGATE Fall Time
-
20
-
ns
LGATE Fall Time
-
20
-
ns
UGATE Turn-Off Propagation Delay
-
30
-
ns
LGATE Turn-Off Propagation Delay
-
20
-
ns
Shutdown Window
1.4
-
3.6
V
Shutdown Holdoff Time
-
230
-
ns
OUTPUT
Upper Drive Source Impedance
R
UGATE
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V or 12V
-
1.7
3.0
-
3.0
5.0
Upper Drive Sink Impedance
R
UGATE
-
2.3
4.0
-
1.1
2.0
Lower Drive Source Current
I
LGATE
400
580
-
mA
500
730
-
mA
Lower Drive Sink Impedance
R
LGATE
-
1.6
4.0
HIP6602A
相關PDF資料
PDF描述
HIP6602ACR-T FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
HIP6602ACB-T Dual Channel Synchronous Rectified Buck MOSFET Driver
HIRF840 N-Channel Power MOSFET
HIRF840F N-Channel Power MOSFET
HJK-20VH Frequency Mixer
相關代理商/技術參數
參數描述
HIP6602ACR-T 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Channel Synchronous Rectified Buck MOSFET Driver
HIP6602B 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Channel Synchronous Rectified Buck MOSFET Driver
HIP6602BCB 功能描述:IC DRVR MOSF 2CH SYC BUCK 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6,D²Pak(5 引線+接片),TO-263BA 供應商設備封裝:TO-263 包裝:管件
HIP6602BCBT 制造商:INTERSIL 功能描述:New
HIP6602BCB-T 功能描述:IC DRIVER MOSFET QUAD 14-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6,D²Pak(5 引線+接片),TO-263BA 供應商設備封裝:TO-263 包裝:管件
主站蜘蛛池模板: 丹巴县| 荔浦县| 临江市| 长治县| 浏阳市| 皋兰县| 花莲市| 盘山县| 郎溪县| 田阳县| 金沙县| 县级市| 云梦县| 临江市| 榆林市| 石门县| 莱西市| 肇州县| 平阳县| 茌平县| 图木舒克市| 山东省| 平利县| 繁峙县| 盐边县| 林周县| 河津市| 建阳市| 开远市| 旬阳县| 潮安县| 犍为县| 伊宁县| 灵寿县| 台湾省| 陇川县| 东明县| 开化县| 大港区| 龙川县| 全椒县|