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參數資料
| 型號： | HM62V16256CLTT-7 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword x 16-bit) |
| 中文描述： | 四米的SRAM（256 - KWord的x 16位） |
| 文件頁數： | 1/18頁 |
| 文件大?。?/td> | 76K |
| 代理商： | HM62V16256CLTT-7 |
HM62V16256C Series
4 M SRAM (256-kword
×
16-bit)
ADE-203-1099D (Z)
Rev. 1.0
Jan. 31, 2001
Description
The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word
×
16-bit. HM62V16256C
Series has realized higher density, higher performance and low power consumption by employing CMOS
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 55 ns/70 ns (max)
Power dissipation:
Active: 5.0 mW/MHz (typ)(V
CC
= 2.5 V)
: 6.0 mW/MHz (typ) (V
CC
= 3.0 V)
Standby: 2 μW (typ) (V
CC
= 2.5 V)
: 2.4 μW (typ) (V
CC
= 3.0 V)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
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| HM62V16258BLTT-7SL | 4 M SRAM (256-kword x 16-bit) |
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