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參數資料
| 型號： | HMBTA14 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | HMBTA14 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA14
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6841
Issued Date : 1994.07.29
Revised Date : 2004.09.01
Page No. : 1/4
HMBTA14
HSMC Product Specification
Description
Darlington Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage........................................................................................................................... 30 V
V
CES
Collector to Emitter Voltage........................................................................................................................ 30 V
V
EBO
Emitter to Base Voltage.............................................................................................................................. 10 V
I
C
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
I
C
=100uA
I
C
=100uA
I
E
=10uA
V
CB
=30V
V
EB
=10V
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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