- 您現在的位置：買賣IC網 > PDF目錄367210 > HMC356LP3 (美國訊泰微波有限公司上海代表處) GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz PDF資料下載
參數資料
| 型號： | HMC356LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz |
| 中文描述： | GaAs PHEMT MMIC低噪聲放大器，350 - 550兆赫 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 318K |
| 代理商： | HMC356LP3 |
MICROWAVE CORPORATION
8 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC356LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v01.0604
General Description
Features
Noise Figure:
≤
1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
Functional Diagram
The HMC356LP3 high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier is ideal for GSM
& CDMA cellular basestation and Mobile Radio
front-end receivers operating between 350 and 550
MHz. This LNA has been optimized to provide 1.0
dB noise figure, 17 dB gain and +38 dBm output IP3
from a single supply of +5.0V @ 104 mA. Input and
output return losses are 15 dB typical, with the LNA
requiring only four external components to optimize
the RF input match, RF ground and DC bias. The
HMC356LP3 shares the same package and pinout
with the HMC372LP3 high IP3 LNA. A low cost,
leadless 3x3 mm (LP3) SMT QFN package houses
the low noise amplifier.
Electrical Specifications,
T
A
= +25° C, Vs = +5V
Typical Applications
The HMC356LP3 is ideal for
basestation receivers:
GSM 450 & GSM 480
CDMA 450
Private Land Mobile Radio
Parameter
Min.
Typ.
Max.
Units
Frequency Range
350 - 550
MHz
Gain
15
17
dB
Gain Variation Over Temperature
0.0032
0.010
dB / °C
Noise Figure
1.0
1.4
dB
Input Return Loss
17
dB
Output Return Loss
12
dB
Reverse Isolation
24
dB
Output Power for 1dB Compression (P1dB)
17
21
dBm
Saturated Output Power (Psat)
22.5
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
34
38
dBm
Supply Current (Idd)
104
mA
相關PDF資料 |
PDF描述 |
|---|---|
| HMC358MS8G | MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
| HMC361S8G | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC361 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC362S8G | SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz |
| HMC362 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC356LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz |
| HMC356LP3_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz |
| HMC356LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC356LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC3587LP3BE | 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態:有效 頻率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪聲系數:4.5dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:47mA 測試頻率:4GHz ~ 5GHz 封裝/外殼:12-VFQFN 裸露焊盤 供應商器件封裝:12-SMT（3x3） 標準包裝:1 |
發布緊急采購，3分鐘左右您將得到回復。