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參數資料
| 型號： | HMC450QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，0.8 - 1.0吉赫 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 393K |
| 代理商： | HMC450QS16G |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
General Description
Features
Functional Diagram
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz.
The amplifier is packaged in a low cost, surface
mount 16 lead package and offers the same pinout
and functionality as the higher band HMC413QS16G
1.6-2.3 GHz PA. With a minimum of external
components, the amplifier provides 26 dB of gain,
+40 dBm OIP3 and +28.5 dBm of saturated power
from a +5.0V supply voltage. The integrated power
control (Vpd) can be used for full power down or RF
output power/current control. The combination of high
gain and high output IP3 make the HMC450QS16G
& HMC450QS16GE ideal linear drivers for Cellular,
PCS & 3G applications.
Gain: 26 dB
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
Electrical Specifications,
T
A
= +25° C, Vs = +5V, Vpd = +4V
[1]
Typical Applications
The HMC450QS16G / HMC450QS16GE is ideal for
power and driver amplifier applications:
GSM, GPRS, & Edge
CDMA & WCDMA
Base Stations & Repeaters
Parameter
Min.
Typ.
Max.
Units
Frequency Range
0.8 - 1.0
GHz
Gain
23
26
dB
Gain Variation Over Temperature
0.015
0.025
dB/°C
Input Return Loss
17
dB
Output Return Loss
13
dB
Output Power for 1 dB Compression (P1dB)
23
26
dBm
Saturated Output Power (Psat)
28.5
dBm
Output Third Order Intercept (IP3)
[2]
37
40
dBm
Noise Figure
8
dB
Supply Current (Icq)
310
mA
Control Current (Ipd)
12
mA
Switching Speed
tON, tOFF
10
ns
[1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
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PDF描述 |
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| HMC450QS16GE | GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| HMC451LC3 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5.0 - 20.0 GHz |
| HMC452QS16G | InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC450QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| HMC450QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 0.5W 16-QSOP |
| HMC450QS16GETR | 功能描述:RF Amplifier IC General Purpose 800MHz ~ 1GHz 16-SMD 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態:有效 頻率:800MHz ~ 1GHz P1dB:26.5dBm 增益:26dB 噪聲系數:8dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:310mA 測試頻率:900MHz 封裝/外殼:16-SSOP（0.154"，3.90mm 寬）裸焊盤 供應商器件封裝:16-SMD 標準包裝:1 |
| HMC451 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
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