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參數資料
| 型號： | HMC478MP86 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 4.0吉赫 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 218K |
| 代理商： | HMC478MP86 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
v00.1004
General Description
Functional Diagram
The HMC478MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 4 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +20 dBm output power. The HMC478MP86
offers 22 dB of gain with a +32 dBm output IP3
at 850 MHz while requiring only 62 mA from a
single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +32 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Robust 1,000V ESD, Class 1C
Typical Applications
The HMC478MP86 is an ideal RF/IF
gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifications,
Vs= 5.0 V, Rbias= 18 Ohm, T
A
= +25° C
Note: Data taken with broadband bias tee on device output.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
19
15
13
11
22
18
16
14
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 4.0 GHz
0.015
0.02
dB/ °C
Input Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
12
13
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
20
17
dB
dB
Reverse Isolation
DC - 4.0 GHz
20
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
15
13
11
9
18
16
14
12
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
32
29
25
dBm
dBm
dBm
Features
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| HMC478SC70 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC478ST89E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC479MP86 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC478MP86_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478MP86E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 4GHZ MICRO-P |
| HMC478SC70 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70E | 功能描述:IC GAIN BLOCK AMP SC70 RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:SIGe 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數據:1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
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