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參數資料
型號: HMS81020TL
廠商: Hynix Semiconductor Inc.
元件分類: 8位微控制器
英文描述: HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS
中文描述: Hynix半導體公司的8位單芯片微控制器
文件頁數: 15/77頁
文件大小: 1112K
代理商: HMS81020TL
HMS81004E/08E/16E/24E/32E
12
JUNE 2001 Ver 1.00
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage...........................................-0.3 to +5.0 V
Input Voltage .....................................-0.3 to V
DD
+0.3 V
Output Voltage...................................-0.3 to V
DD
+0.3 V
Operating Temperature........................................0~70
°
C
Storage Temperature ......................................-65~150
°
C
Power Dissipation................................................700 mA
Note:
Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
7.2 Recommended Operating Conditions
7.3 DC Electrical Characteristics
(T
A
=-0~70
°
C, V
DD
=2.0~3.6V, GND=0V)
Parameter
Symbol
Condition
Specifications
Unit
Min.
Max.
Supply Voltage
V
DD
f
XIN
=4MHz
2.0
3.6
V
Operating Frequency
f
XIN
V
DD
=2.0~3.6V
1.0
4.0
MHz
Operating Temperature
T
OPR
-
0
+70
°
C
Parameter
Symbol
Condition
Specifications
Unit
Min.
Typ.
Max.
High level
input Voltage
V
IH1
R11,R12,R14,RESET
0.8 V
DD
-
V
DD
V
V
IH2
R0,R1(except R11,R12,R14), R2
0.7 V
DD
-
V
DD
V
Low level
input Voltage
V
IL1
R11,R12,R14,RESET
0
-
0.2 V
DD
V
V
IL2
R0,R1(except R11,R12,R14), R2
0
-
0.3 V
DD
V
Hign level input
Leakage Current
I
IH
R0,R1,R2,RESET ,V
IH
= VDD
-
-
1
μ
A
Low level input
Leakage Current
I
IL
R0,R1,R2,RESET (without pull-up),V
IL
= 0
-
-
-1
μ
A
High level
output Voltage
V
OH1
R0, I
OH
=-0.5mA
VDD-0.4
-
-
V
V
OH2
R1[6:0], R2, I
OH
=-1.0mA
VDD-0.4
-
-
V
V
OH3
XIN, XOUT,I
OH
=-200
μ
A
VDD-0.9
-
-
V
Low level
output Voltage
V
OL1
R0, I
OL
=1mA
-
-
0.4
V
V
OL2
R1, R2, I
OL
=5mA
-
-
0.8
V
V
OL3
XIN, XOUT,I
OL
=200
μ
A
-
-
0.8
V
Hign level output
Leakage Current
I
OHL
R0,R1,R2, V
OH
= VDD
-
-
1
μ
A
Low level output
Leakage Current
I
OLL
R0,R1,R2, V
OL
= 0
-
-
-1
μ
A
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