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參數資料
| 型號： | HN1A07F |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Applications |
| 中文描述： | 硅外延式進步黨（厘進程）小功率音頻放大器應用 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 128K |
| 代理商： | HN1A07F |
HN1A07F
2007-11-22
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A07F
Audio Frequency Small Power Amplifier Applications
Driver Stage Amplifier Applications
Switching applications
z
Excellent Currrent gain(h
FE
)linearity
: h
FE(2)
=25 (Min.) at V
CE
=
6V I
C
=
400mA
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Base current
I
B
100
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25
°
C) (Q1,Q2 Common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
CBO
I
EBO
h
FE(1)
V
CB
=
50V, I
E
= 0
V
EB
=
5V, I
C
= 0
V
CE
=
1V, I
C
=
100mA
V
CE
=
1V, I
C
=
400mA
―
―
100
nA
―
―
100
nA
70
―
240
DC current gain
h
FE(2)
25
―
―
Collector-emitter
saturation voltage
V
CE (sat)
I
C
=
100mA, I
B
=
10mA
―
0.1
0.25
V
Base-Emitter voltage
Transition frequency
V
BE
f
T
C
ob
V
CE
=
1V, I
C
=
100mA
V
CE
=
6V, I
C
=
20mA
V
CB
=
6V, I
E
= 0, f = 1MHz
―
0.8
1.0
V
―
200
―
MHz
Collector output capacitance
―
13
―
pF
Marking Equivalent Circuit
(Top View)
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.015mg(typ.)
―
―
2-3N1A
Unit: mm
47
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