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參數資料
| 型號： | HN1B04F_07 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| 中文描述： | npn型硅外延型（厘進程）通用音頻放大器應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 520K |
| 代理商： | HN1B04F_07 |
HN1B04F
2007-11-22
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1
:
z
Excellent h
FE
linearity
: h
FE(2)
=25 (Min.) at V
CE
=
6V I
C
=
400mA
Q2
:
z
Excellent h
FE
linearity
: h
FE(2)
=25 (Min.) at V
CE
= 6V I
C
= 400mA
Q1 Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
35
V
Collector-emitter voltage
V
CEO
30
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Q2 Absolute Maximum Ratings (Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
35
V
Collector-emitter voltage
V
CEO
30
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Q1,Q2 Common Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating. 200mW per element must be exceeded.
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.015g(typ.)
―
―
2-3N1A
Unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| HN1B26FS | General-Purpose Amplifier Applications |
| HN1C01FE | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1C01FUGR | JIS C 5432 standard waterproof connectors; HRS No: 114-2163-7 71; Shell Size (dia): 25; Operating Temperature Range (degrees C): -25 to 85; General Description: Cap |
| HN1C01FUY | JIS C 5432 standard waterproof connectors; HRS No: 114-2172-8 00 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN1B04FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| HN1B04FE-GR(5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP/NPN -50V -0.15A ES6 |
| HN1B04FE-Y(T5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP/NPN -50V -0.15A ES6 |
| HN1B04FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B04FUGR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
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