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參數(shù)資料
| 型號： | HN2A26FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | Frequency General-Purpose Amplifier Applications |
| 中文描述： | 頻率通用放大器應用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 144K |
| 代理商： | HN2A26FS |
HN2A26FS
2005-04-11
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A26FS
Frequency General-Purpose Amplifier Applications
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
High voltage: V
CEO
=
50 V
High current: I
C
=
100 mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.1 mA)/h
FE
(I
C
=
2 mA) = 0.95 (typ.)
Lead (Pb) - free
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
30
mW
Collector power dissipation
P
C
(Note)
50
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55 ~ 150
°
C
Note: Total rating.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
50 V, I
E
=
0
0.1
μ
A
Emitter cutoff current
I
EBO
V
EB
=
5 V, I
C
=
0
0.1
μ
A
DC current gain
h
FE
(Note)
V
CE
=
6 V, I
C
=
2 mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
100 mA, I
B
=
10 mA
―
0.18
0.3
V
Transition frequency
f
T
V
CE
=
10 V, I
C
=
1 mA
80
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1.6
pF
Note: h
FE
Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Marking Equivalent Circuit
(top view)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Type Name
h
FE
Rank
PF
0
0.1±0.05
6
0.8±0.05
1.0±0.05
0
1
2
0.1±0.05
0
0
3
1
0
5
4
0
+
-
fS6
1. EMITTER1
2. EMITTER2
3. BASE2
4. COLLECTOR2
5. BASE1
6. COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
6
5
4
1
2
3
Q2
Q1
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