| 型號 | 廠商 | 描述 |
| hn29w6411att-50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
EEPROM|AND FLASH|8448KX8|CMOS|TSOP|48PIN|PLASTIC | |
| hn29w6411tt-50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
AND Flash EEPROM | |
| hn29w6484ah03te-1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
MEMORY CONTROLLER | |
| hn29w64ah05te-1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
MEMORY CONTROLLER | |
| hn29w8411series 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
AND Flash EEPROM | |
| hn29wb800fp-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800fp-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800fp-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Bottom entry type connector, Two-piece connector; HRS No: 547-0114-4 00; No. of Positions: 20; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm | |
| hn29wb800r-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800r-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800r-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800series 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800t-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800t-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wb800t-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800fp-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800fp-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800fp-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800r-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800r-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800r-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800series 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Bottom entry type connector, Two-piece connector; HRS No: 547-0093-6 00; No. of Positions: 22; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm | |
| hn29wt800t-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800t-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn29wt800t-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
x8/x16 Flash EEPROM | |
| hn2a01fugr 2 3 |
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| hn2a01fuy 2 3 |
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| hn2a01fu 2 |
Toshiba Corporation | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| hn2a26fs 2 3 |
Toshiba Corporation | Frequency General-Purpose Amplifier Applications |
| hn2c01fugr 2 3 |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| hn2c01fuy 2 3 |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| hn2c01fu 2 |
Toshiba Corporation | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| hn2c10ft 2 |
Toshiba Corporation | VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| hn2c10fu 2 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn2c11fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn2c12ft 2 3 |
TRANSISTOR | BJT | PAIR | NPN | 8V V(BR)CEO | 15MA I(C) | TSOP | |
| hn2c13ft 2 3 |
TRANSISTOR | BJT | PAIR | NPN | 5V V(BR)CEO | 15MA I(C) | TSOP | |
| hn2c12fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn2d01fu 2 |
ARRAY OF INDEPENDENT DIODES|TSOP | |
| hn2d01fu 2 |
Toshiba Corporation | Ultra High Speed Switching Diode(超高速開關二極管) |
| hn2d01f 2 |
Toshiba Corporation | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| hn2d01je 2 3 4 |
Toshiba Corporation | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| hn2d02fu 2 |
Toshiba Corporation | Ultra High Speed Switching Diode(超高速開關二極管) |
| hn2d03f 2 3 4 |
Toshiba Corporation | High Speed Switching Application |
| hn2e01f 2 3 4 5 6 7 |
Toshiba Corporation | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| hn2e01f_07 2 3 4 5 6 7 |
Toshiba Corporation | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| hn2e02f 2 3 4 5 6 |
Toshiba Corporation | Super High Speed Switching Application |
| hn2e04f 2 3 4 5 6 7 8 |
Toshiba Corporation | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| hn2e05j 2 3 4 5 6 |
Toshiba Corporation | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| hn2s01fu 2 |
Toshiba Corporation | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |