- 您現在的位置：買賣IC網 > PDF目錄371869 > HN2E02F (Toshiba Corporation) Super High Speed Switching Application PDF資料下載
參數資料
| 型號： | HN2E02F |
| 廠商： | Toshiba Corporation |
| 英文描述： | Super High Speed Switching Application |
| 中文描述： | 超高速開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 286K |
| 代理商： | HN2E02F |
HN2E02F
2007-11-22
1
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E02F
Super High Speed Switching Application
Audio Frequency Amplifier Application
AM Amplifier Application
Q1
Q2
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
:V
F(3
)=0.98V(typ.)
:t
rr
=1.6ns(typ.)
:C
T
=0.5pF(typ.)
High Voltage
High Collector Current
Good h
FE Linearity
:h
FE(
I
C
=0.1mA)/ h
FE(
I
C
=2mA) =0.95
Q1 (Diode) : 1SS352 Equivalent
Q2 (Transistor) : 2SC4738 Equivalent
:V
CEO
=50V
:I
C
=150mA(max.)
Q1 (Diode) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300
mA
Average forward current
I
O
100
mA
Surge current (10ms)
I
FSM
1
A
Q2 (Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55~125
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed
200mW per element.
1.Anode
2.Base
3.Collector
4.Emitter
5.NC
6.Cathode
JEDEC
―
JEITA
―
TOSHIBA
2-3N1D
Weight: 0.015g (typ.)
Unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| HN2E04F | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E05J | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2S01FU | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
| HN2S01F | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
| HN2S02FU | High Speed Switching Application |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN2E04F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E05J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E07JE(TE85L,F) | 功能描述:兩極晶體管 - BJT Small Signal SBD + PNP (BRT) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN2S01F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
| HN2S01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Voltage High Speed Switching Application |
發布緊急采購，3分鐘左右您將得到回復。