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參數(shù)資料
型號(hào): HN2A01FUY
英文描述: TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
中文描述: 晶體管|晶體管|一對(duì)|進(jìn)步黨| 50V五(巴西)總裁| 150毫安一(c)|的TSOP
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 138K
代理商: HN2A01FUY
HN2A01FU
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
=
50V, I
C
=
1
50mA (max)
High h
FE
: h
FE
=
1
20
~
400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.
1
mA) / (I
C
=
2mA)
= 0.95 (typ.)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
*
Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50V, I
E
= 0
0.1
μA
Emitter cut-off current
I
EBO
V
EB
=
5V, I
C
= 0
0.1
μA
DC current gain
h
FE (Note)
V
CE
=
6V, I
C
=
2mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
100mA, I
B
=
10mA
0.1
0.3
V
Transition frequency
f
T
V
CE
=
10V, I
C
=
1mA
80
MH
z
Collector output capacitance
C
ob
V
CB
=
10V, I
E
= 0, f = 1MH
z
4
7
pF
Note: h
FE
classification
Y(Y):
1
20
~
240, GR(G): 200
~
400
( ) marking symbol
Marking
Equivalent Circuit
(Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1B
Unit: mm
相關(guān)PDF資料
PDF描述
HN2A01FU PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN2A26FS Frequency General-Purpose Amplifier Applications
HN2C01FUGR TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2C01FUY TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2C01FU NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
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