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參數(shù)資料
| 型號： | HN7G04FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | General-Purpose Amplifier Applications |
| 中文描述： | 通用放大器應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 446K |
| 代理商： | HN7G04FU |
HN7G04FU
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G04FU
General-Purpose Amplifier Applications
Driver Circuit Applications
Switching and Muting Switch Applications
Q1: 2SA1954 equivalent
Q2: RN1307 equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
6
V
Collector current
I
C
100
mA
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
(Note 1)
200
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating. 130 mW per element should not be exceeded.
Unit: mm
1.EMITTER
2.BASE
3.COLLECTOR
4.EMITTER
5.BASE
6.COLLECTOR
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Equivalent Circuit
(top view)
Marking
9A
Type Name
h
FE
Rank
6
5
4
1
2
3
Q1
Q2
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| HN7G04FU-A | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N 10K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| HN7G06FE-A(TE85L,F | 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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