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參數(shù)資料
| 型號： | HPLU3103 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs(52A, 30V, 0.019 Ω,N溝道,邏輯電平功率MOS場效應管) |
| 中文描述： | 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 71K |
| 代理商： | HPLU3103 |
6-5
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.4
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
110
o
C/W
(PCB Mount Steady State)
-
-
50
o
C/W
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode
-
-
52(Note
1)
A
Pulsed Source to Drain Current (Note 2)
I
SDM
-
-
220
A
Source to Drain Diode Voltage (Note 3)
V
SD
I
SD
= 28A
-
-
1.3
V
Reverse Recovery Time (Note 3)
t
rr
I
SD
= 34A, dI
SD
/dt = 100A/
μ
s
-
81
120
ns
Reverse Recovered Charge (Note 3)
Q
RR
I
SD
= 34A, dI
SD
/dt = 100A/
μ
s
-
210
310
nC
NOTES:
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11).
3. Pulse width
≤
300
μ
s; duty cycle
≤
2%.
4. V
DD
= 15V, starting T
J
= 25
o
C, L = 300
μ
H, R
G
= 25
, peak I
AS
= 34A, (Figure 10).
Typical Performance Curves
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. OUTPUT CHARACTERISTICS
D
G
S
1
100
1000
0.1
1.0
10
100
20
μ
s PULSE WIDTH
T
C
= 25
o
C
V
GS
IN DECENDING ORDER
15V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
1
100
1000
0.1
1
10
100
20
μ
s PULSE WIDTH
T
C
= 150
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
15V
V
GS
IN DECENDING ORDER
10
HPLR3103, HPLU3103
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