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參數(shù)資料
| 型號： | HPLU3103 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs(52A, 30V, 0.019 Ω,N溝道,邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 71K |
| 代理商： | HPLU3103 |
6-6
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
Typical Performance Curves
(Continued)
1
10
100
1000
2
4
6
7
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
20
μ
s PULSE WIDTH
V
DS
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
3
5
8
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
O
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 46A, V
GS
= 10V
0
400
800
1200
1600
2000
2400
2800
3200
10
100
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
C
ISS
C
OSS
C
RSS
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
V
DS
= 24V
0
4
8
12
16
20
0
10
Q
G
, TOTAL GATE CHARGE (nC)
20
30
40
V
G
,
I
D
= 34A
V
DS
= 15V
10
100
1000
0.4
1.2
2.0
2.8
T
J
= 25
o
C
T
J
= 175
o
C
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
S
,
2.4
1.6
0.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 46A, V
GS
= 10V
1
10
100
1000
1
10
100
LIMITED BY r
DS(ON)
AREA MAY BE
V
DSS
MAX = 30V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10ms
1ms
100
μ
s
10
μ
s
HPLR3103, HPLU3103
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