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參數資料
| 型號： | HSB857J |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | HSB857J |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857J
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HJ200101
Issued Date : 2001.09.01
Revised Date : 2005.07.14
Page No. : 1/4
HSB857J
HSMC Product Specification
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................................................. -50~+150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C)..................................................................................................................... 20 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage......................................................................................................................... -60 V
BV
CEO
Collector to Emitter Voltage..................................................................................................................... -50 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current.............................................................................................................................................. -3 A
I
C
Collector Current (I
C
Peak)............................................................................................................................ -4.5 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
f
T
Min.
-60
-50
-5
-
-
-
-
-
170
-
Typ.
-
-
-
-
-
-
-0.3
-
-
15
Max.
-
-
-
-1
-1
-1
-1
-1.5
400
-
Unit
V
V
V
uA
uA
uA
V
V
Test Conditions
I
C
=-50uA
I
C
=-1mA
I
E
=-50uA
V
CB
=-50V
V
CE
=-40V
V
EB
=-4V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-500mA, V
CE
=-3V
V
CE
=-5V, I
C
=-500mA, f=100MHz
MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-252
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