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參數(shù)資料
| 型號(hào)： | HSDL-4251 |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | High-Performance T-1 (5mm) AlGaAs Infrared (870nm) Lamp |
| 中文描述： | 性能優(yōu)異的T - 1（5mm）的AlGaAs的紅外（870nm）燈 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 190K |
| 代理商： | HSDL-4251 |
3
Parameter
Symbol
Min.
Typ.
Max. Unit
Condition
Reference
Radiant On-Axis Intensity
I
E
HSDL-4250
124
180
-
mW/Sr
I
FDC
=100mA
Figure 5
HSDL-4251
56
100
-
mW/Sr
I
FDC
=100mA
Radiant On-Axis Intensity
Temperature Coefficient
I
E
/
T
-
-0.43
-
%/°C
I
FDC
=100mA
Viewing Angle
2
θ
1/2
HSDL-4250
-
15
-
°
Figure 7
HSDL-4251
-
30
-
°
Figure 7
Peak Wavelength
λ
pk
λ
/
T
-
870
-
nm
Figure 1
Peak wavelength
Temperature Coefficient
-
0.22
-
nm/°C
I
FDC
=100mA
Spectral Width
λ
45
-
nm
I
FDC
=50mA
Figure 1
Optical Rise and Fall Time
t
r
/t
f
40
-
ns
I
FDC
=500mA
Duty Ratio = 20%
Pulse Width=125ns
Figure 1. Relative Radiant Intensity vs. Wavelength
Figure 2. DC Forward Current vs. Forward Voltage
Peak Wavelength Vs Relative Radiant Intensity
0
0.2
0.4
0.6
0.8
1
1.2
800
820
840
860
880
900
920
940
Peak Wavelength in nm
R
V-I Characteristics
1
10
100
0
0.5
1
1.5
2
Vf - Forward Voltage - (V)
I
Figure 3. Peak Forward Current vs. Forward Voltage
Forward Voltage Vs Temperature
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-25
0
25
50
75
100
125
Temperature in Degrees
F
I-Led=20mA
I-Led=100mA
Figure 4. Forward Voltage vs. Ambient Temperature
Optical Characteristics at 25
°
C
Peak Forward Voltage Vs Peak Forward Current
1
10
100
1000
0
0.5
Vfpk - Peak Forward Voltage - (V)
1
1.5
2
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSDL-4260 | High-Power T-1 (5mm) AlGaAs Infrared (875nm) Lamp |
| HSDL-4261 | High-Power T-1 (5mm) AlGaAs Infrared (870nm) Lamp |
| HSDL-4270 | High-Performance T-1 (5mm) AlGaAs Infrared (940nm) Lamp |
| HSDL-4271 | High-Performance T-1 (5mm) AlGaAs Infrared (940nm) Lamp |
| HSDL-7002 | 3/16 Encode/Decode Integrated Circuit in QFN Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSDL-4260 | 功能描述:紅外發(fā)射源 IR Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4261 | 功能描述:紅外發(fā)射源 IR Emitter 870nm High Power RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4261-A01 | 功能描述:紅外發(fā)射源 IR Emitter 870nm High Power RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4270 | 功能描述:紅外發(fā)射源 IR Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4271 | 功能描述:紅外發(fā)射源 IR Lamp Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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