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參數資料
| 型號： | HSDL-4251 |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | High-Performance T-1 (5mm) AlGaAs Infrared (870nm) Lamp |
| 中文描述： | 性能優異的T - 1（5mm）的AlGaAs的紅外（870nm）燈 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 190K |
| 代理商： | HSDL-4251 |
4
Figure 5. Relative Radiant Intensity vs. DC Forward Current
Forward Current Vs Relative Radiant Intensity
0
0.2
0.4
0.6
0.8
1
1.2
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20
40
Forward Current in mA
60
80
100
120
R
Maximum Permisible DC forward current vs. ambient temperature
110
0
10
20
30
40
50
60
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80
90
100
0
10
20
30
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90
T
A
- Ambient Temperature -C
I
D
F
300
Figure 6. DC Forward Current vs. Ambient Temperature Derated
Based on TJMAX=110
°
C
Figure 7a. Radiant Intensity vs. Angular Displacement for HSDL-4250
4250-Angle Vs Relative Radiant Intensity
1.2
0
0.2
0.4
0.6
0.8
1
-90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Angle in degrees
R
4251-Angle Vs Relative Radiant Intensity
1.2
0
0.2
0.4
0.6
0.8
1
-100 -90-80-70-60-50-40-30-20-10 0 10 20 30 40 50 60 70 80 90 100
Angle in Degrees
R
Figure 7b. Radiant Intensity vs. Angular Displacement for HSDL-4251
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright 2006 Avago Technologies Pte. All rights reserved.
5989-4467EN -
January3, 2006
相關PDF資料 |
PDF描述 |
|---|---|
| HSDL-4260 | High-Power T-1 (5mm) AlGaAs Infrared (875nm) Lamp |
| HSDL-4261 | High-Power T-1 (5mm) AlGaAs Infrared (870nm) Lamp |
| HSDL-4270 | High-Performance T-1 (5mm) AlGaAs Infrared (940nm) Lamp |
| HSDL-4271 | High-Performance T-1 (5mm) AlGaAs Infrared (940nm) Lamp |
| HSDL-7002 | 3/16 Encode/Decode Integrated Circuit in QFN Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSDL-4260 | 功能描述:紅外發射源 IR Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4261 | 功能描述:紅外發射源 IR Emitter 870nm High Power RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4261-A01 | 功能描述:紅外發射源 IR Emitter 870nm High Power RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4270 | 功能描述:紅外發射源 IR Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| HSDL-4271 | 功能描述:紅外發射源 IR Lamp Emitter RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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