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參數資料
| 型號： | HSMB-CXXX |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | Surface Mount Chip LEDs |
| 中文描述： | 表面貼裝芯片LED |
| 文件頁數： | 4/9頁 |
| 文件大小： | 162K |
| 代理商： | HSMB-CXXX |
4
Light Intensity (Iv) Bin Limits
[1]
Intensity (mcd) Intensity (mcd)
Bin ID
Min.
Max.
A
0.11
0.18
B
0.18
0.29
C
0.29
0.45
D
0.45
0.72
E
0.72
1.10
F
1.10
1.80
G
1.80
2.80
H
2.80
4.50
J
4.50
7.20
K
7.20
11.20
L
11.20
18.00
M
18.00
28.50
Tolerance:±15%
Bin ID
N
P
Q
R
S
T
U
V
W
X
Y
Min.
28.50
45.00
71.50
112.50
180.00
285.00
450.00
715.00
1125.00
1800.00
2850.00
Max.
45.00
71.50
112.50
180.00
285.00
450.00
715.00
1125.00
1800.00
2850.00
4500.00
Optical Characteristics at T
A
=25°C
Part No.
I
v
(mcd) @ 20 mA
Min.
1.80
Luminous
Intensity
[1]
Peak
Dominant
Wavelength
λ
d
(nm)
Typ.
466
Viewing
Angle 2
θ
1/2
(degrees)
[2]
Typ.
170
Wavelength
λ
peak
(nm)
Typ.
428
Color
Typ.
6.0
HSMB-
C190/C170/
C150/C191
HSMB-C110
N
otes:
1.
Theluminousintensity,I
v
,ismeasuredatthepeakofthespatialradiationpattern,whichmaynotbealignedwiththemechanicalaxisofthe
lamppackage.
2.u
1/2
istheoff-axisanglewheretheluminousintensityis1/2thepeakintensity.
SiCBlue
SiCBlue
1.80
6.5
428
466
130
Electrical Characteristics at T
A
=25°C
Part No.
HSMB-C190/C170/C150/C191
HSMB-C110
V
F
Tolerance:±0.1V
Reverse
Breakdown
V
R
(Volts)
@ I
R
= 100 μA
Min.
5
5
Forward Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ.
3.8
3.8
Thermal
Resistance
R
θ
J-P
(°C/W)
Typ.
300
300
Capacitance C
(pF) @ V
F
= 0 V,
f = 1 MHz
Typ.
67
67
Max.
4.6
4.6
Note:
1.Bincategoriesareestablishedforclassificationofproducts.Productsmaynotbeavailablein
allcategories.PleasecontactyourAvagorepresentativeforinformationoncurrentlyavail-
ablebins.
Tolerance:±1nm
Note:
1.Bincategoriesareestablishedforclass-
ificationofproducts.Productsmaynotbe
availableinallcategories.Pleasecontact
yourAvagorepresentativeforinformation
oncurrentlyavailablebins.
Blue Color Bins
[1]
Dom. Wavelength (nm)
Bin ID
Min.
A
460.0
B
465.0
C
470.0
D
475.0
Max.
465.0
470.0
475.0
480.0
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