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參數資料
| 型號： | HUF75337G3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管) |
| 中文描述： | 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 106K |
| 代理商： | HUF75337G3 |
116
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.8
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
600
1200
1800
2400
3000
10
20
30
40
50
60
0
0
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
10
20
30
40
50
60
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 75A
I
D
= 60A
I
D
= 40A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
HUF75337G3, HUF75337P3, HUF75337S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管) |
| HUF75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管) |
| HUF75829D3 | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應管) |
| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF75337P3 | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337P3_Q | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75337S3S | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337S3ST | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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