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參數資料
型號: HUF75337G3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管)
中文描述: 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數: 9/9頁
文件大小: 106K
代理商: HUF75337G3
120
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV February 1999
HUF75337
CTHERM1 th 6 8.0e-7
CTHERM2 6 5 1.6e-6
CTHERM3 5 4 4.8e-3
CTHERM4 4 3 7.6e-3
CTHERM5 3 2 2.4e-2
CTHERM6 2 tl 1.5
RTHERM1 th 6 1.3e-4
RTHERM2 6 5 1.8e-3
RTHERM3 5 4 3.7e-2
RTHERM4 4 3 2.3e-1
RTHERM5 3 2 3.4e-1
RTHERM6 2 tl 6.4e-2
SABER Thermal Model
SABER thermal model HUF75337
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.0e-7
ctherm.ctherm2 6 5 = 1.6e-6
ctherm.ctherm3 5 4 = 4.8e-3
ctherm.ctherm4 4 3 = 7.6e-3
ctherm.ctherm5 3 2 = 2.4e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 1.3e-4
rtherm.rtherm2 6 5 = 1.8e-3
rtherm.rtherm3 5 4 = 3.7e-2
rtherm.rtherm4 4 3 = 2.3e-1
rtherm.rtherm5 3 2 = 3.4e-1
rtherm.rtherm6 2 tl = 6.4e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75337G3, HUF75337P3, HUF75337S3S
相關PDF資料
PDF描述
HUF75337P3 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管)
HUF75337S3S 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應管)
HUF75829D3 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應管)
HUF75829D3S 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應管)
HUF76105DK8 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應管)
相關代理商/技術參數
參數描述
HUF75337P3 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337P3_Q 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75337S3S 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337S3ST 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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