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參數資料
| 型號： | HUF76112SK8 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場效應管) |
| 中文描述： | 7.5 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 255K |
| 代理商： | HUF76112SK8 |
1
TM
File Number
4834.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
UltraFET is a registered trademark of Intersil Corporation.
HUF76112SK8
7.5A, 30V, 0.026 Ohm, N-Channel, Logic
Level Power MOSFET
The HUF76112SK8 is an Application-Specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses, thereby increasing the overall system efficiency.
Symbol
Packaging
SO8 (JEDEC MS-012AA)
Features
7.5A, 30V
- r
DS(ON)
= 0.026
,
V
GS
=
10V
- r
DS(ON)
= 0.033
,
V
GS
=
5V
PWM Optimized for Synchronous Buck Applications
Fast Switching
Low Gate Charge
- Q
g
Total 15nC (Typ)
Low Capacitance
- C
ISS
725pF (Typ)
- C
RSS
36pF (Typ)
DRAIN (8)
SOURCE (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
SOURCE (2)
BRANDING DASH
1
2
34
5
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76112SK8
MS-012AA
76112SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the HUF76112SK8 in tape and reel, e.g., HUF76112SK8T.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k
) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2)
Continuous (T
A
= 100
o
C, V
GS
= 5V) (Note 2)
Pulsed Drain Current
Power Dissipation (Note 2)
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
Measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10
second.
Measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000
seconds. (Figure 23)
Measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000
seconds. (Figure 23)
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. R
θ
JA
= 50
o
C/W
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
SYMBOL
V
DSS
V
DGR
V
GS
HUF76112SK8
30
30
±
16
UNITS
V
V
V
I
D
I
D
I
DM
P
D
7.5
4.0
Figure 4
2.5
20
-55 to 150
A
A
A
W
mW/
o
C
o
C
T
J
, T
STG
T
L
T
pkg
300
260
o
C
o
C
R
θ
JA
50
o
C/W
152
o
C/W
189
o
C/W
Data Sheet
April 2000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF76112SK8T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SO |
| HUF76113DK8 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8 | 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8T | 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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