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參數資料
| 型號： | HUF76113T3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| 中文描述： | 4.7 A, 30 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 175K |
| 代理商： | HUF76113T3ST |
1
TM
File Number
4388.3
HUF76113T3ST
4.7A, 30V, 0.031 Ohm
,
N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
Logic Level Gate Drive
4.7A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.031
Temperature Compensating PSPICE
Model
Temperature Compensating SABER Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113T3ST
SOT-223
76113
NOTE: HUF76113T3ST is available only in tape and reel.
D
G
S
SOURCE
GATE
DRAIN
DRAIN
(FLANGE)
Data Sheet
June 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a registered trademark of Intersil Corporation.
PSPICE is a registered trademark of MicroSim Corporation. SABER is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
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