- 您現在的位置：買賣IC網 > PDF目錄385409 > HUF76113DK8 (HARRIS SEMICONDUCTOR) 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應管) PDF資料下載
參數資料
| 型號： | HUF76113DK8 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| 中文描述： | 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 5/12頁 |
| 文件大小： | 210K |
| 代理商： | HUF76113DK8 |
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
3
4
5
2
0
5
10
15
20
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
1
25
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
20
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
25
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 3V
30
V
GS
= 3.5V
V
GS
= 4V
I
D
= 1.8A
0
50
100
150
200
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
= 6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
0
0.6
0.8
1.0
1.2
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.4
V
GS
= 10V, I
D
= 6A
-80
-40
0
40
80
120
160
0.6
0.7
0.8
0.9
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.1
1.2
1.1
1.0
0.9-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76113DK8
相關PDF資料 |
PDF描述 |
|---|---|
| HUF76113T3ST | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76132P3 | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76132SK8 | 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76139P3 | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8 | 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8T | 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113T3ST | 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121D3 | 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。