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參數資料
| 型號： | HUF76139P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| 中文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 5/10頁 |
| 文件大小： | 121K |
| 代理商： | HUF76139P3 |
6-158
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
40
80
120
160
0
1
2
3
4
5
6
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 15V
-40
o
C
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
40
80
120
160
0
1
2
3
4
5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
6
8
10
12
14
2
4
6
8
10
r
D
,
O
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 25A
I
D
= 75A
I
D
= 50A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-60
0
60
120
180
N
O
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
0.4
0.6
0.8
1.0
1.2
-60
0
60
120
180
V
GS
= V
DS
, I
D
= 250
μ
A
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
0.9
1.0
1.1
1.2
-60
0
60
120
180
I
D
= 250
μ
A
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
HUF76139P3, HUF76139S3S
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PDF描述 |
|---|---|
| HUF76139S3S | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76407D3 | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76407D3S | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76407P3 | 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76409D3 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF76139P3_NS2552 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76139S3 | 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3ST | 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3STK | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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