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參數(shù)資料
| 型號(hào)： | HUF76139P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 121K |
| 代理商： | HUF76139P3 |
6-159
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
0
1000
2000
3000
4000
0
5
10
15
20
25
30
C
C
ISS
C
OSS
C
RSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
2
4
6
8
10
0
20
40
60
80
V
DD
= 15V
I
D
= 75A
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
V
G
,
Q
g
, GATE CHARGE (nC)
0
200
400
600
800
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
GS
= 4.5V, V
DD
= 15V, I
D
= 61A, R
L
= 0.246
t
r
t
f
t
d(OFF)
t
d(ON)
0
100
300
400
500
0
10
20
30
40
50
S
V
GS
= 10V, V
DD
= 15V, I
D
= 75A, R
L
= 0.2
R
GS
, GATE TO SOURCE RESISTANCE (
)
200
t
f
t
r
t
d(OFF)
t
d(ON)
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76139P3, HUF76139S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76139S3S | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76407D3 | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76407D3S | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76407P3 | 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76409D3 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76139P3_NS2552 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76139S3 | 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3ST | 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3STK | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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