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參數資料
| 型號： | HX6228ASNT |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 25 ns, CDFP40 |
| 封裝： | 0.775 X 0.710 INCH, CERAMIC, FP-40 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 151K |
| 代理商： | HX6228ASNT |
RADIATION
Fabricated with RICMOS IV Silicon on Insulator (SOI)
0.7
m Process (L
eff = 0.55 m)
Total Dose Hardness through 1x106 rad(SiO
2)
Neutron Hardness through 1x1014 cm-2
Dynamic and Static Transient Upset Hardness
through 1x1011 rad (Si)/s
Dose Rate Survivability through <1x1012 rad(Si)/s
Soft Error Rate of <1x10-10 upsets/bit-day in
Geosynchronous Orbit
No Latchup
128K x 8 STATIC RAM—SOI
HX6228
OTHER
Read/Write Cycle Times
≤ 16 ns (Typical)
≤ 25 ns (-55 to 125°C)
Typical Operating Power <25 mW/MHz
Asynchronous Operation
CMOS or TTL Compatible I/O
Single 5 V
± 10% Power Supply
Packaging Options
- 32-Lead Flat Pack (0.820 in. x 0.600 in.)
- 40-Lead Flat Pack (0.775 in. x 0.710 in.)
Military & Space Products
GENERAL DESCRIPTION
The 128K x 8 Radiation Hardened Static RAM is a high
performance 131,072 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in radiation environ-
ments. The RAM operates over the full military temperature
range and requires only a single 5 V
± 10% power supply. The
RAM is wire bond programmable for either TTL or CMOS
compatible I/O. Power consumption is typically less than 25
mW/MHz in operation, and less than 5 mW in the low power
disabled mode. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 15 ns at 5V.
Honeywell’s enhancedSOI RICMOSIV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and process
hardening techniques. The RICMOS IV process is an
advanced 5-volt, SIMOX CMOS technology with a 150
gate oxide and a minimum feature size of 0.7
m (0.55 m
effective gate length—L
eff).
Additional features include
Honeywell’s proprietary SHARP planarization process, and
a lightly doped drain (LDD) structure for improved short
channel reliability. A 7 transistor (7T) memory cell is used for
superior single event upset hardening, while three layer
metal power bussing and the low collection volume SIMOX
substrate provide improved dose rate hardening.
FEATURES
相關PDF資料 |
PDF描述 |
|---|---|
| HX6409TQHT | 4K X 9 OTHER FIFO, 30 ns, CDFP32 |
| HX80ML | 0.02 A, 8000 V, SILICON, SIGNAL DIODE |
| HY29F002BP-55I | 256K X 16 FLASH 5V PROM, 55 ns, PDIP32 |
| HY29F002BC-45I | 256K X 16 FLASH 5V PROM, 45 ns, PQCC32 |
| HY29F400TR-12 | 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HX6228ASRC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228ASRT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228AVFC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228AVFT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228AVHC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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