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參數資料
| 型號： | HX6228TEFC |
| 廠商： | Honeywell International Inc. |
| 英文描述： | 128K x 8 STATIC RAM-SOI HX6228 |
| 中文描述： | 128K的× 8靜態RAM的絕緣硅HX6228 |
| 文件頁數： | 12/12頁 |
| 文件大小： | 153K |
| 代理商： | HX6228TEFC |
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Helping You Control Your World
900156
2/97
PART NUMBER
C
S
6228
X
H
R
T
ORDERING INFORMATION (1)
SCREEN LEVEL
V=QML Class V
Q=QML Class Q
S=Level S
B=Level B
E=Engr Device (2)
SOURCE
H=HONEYWELL
PACKAGE DESIGNATION
T=32-Lead FP
A=40-Lead FP
K=Known Good Die
- =Bare die (No Package)
TOTAL DOSE
HARDNESS
R=1x10
5
rad(SiO
2
)
F=3x10
5
rad(SiO
2
)
H=1x10
6
rad(SiO
)
N=No Level Guaranteed
PROCESS
X=SOI
INPUT
BUFFER TYPE
C=CMOS Level
T=TTL Level
(1) Orders may be faxed to 612-954-2051. For technical assistance, contact our Customer Logistics Department at 612-954-2888.
(2) Engineering Device description: Parameters are tested from -55 to 125
°
C, 24 hr burn-in, IDDSB = 10mA, no radiation guaranteed.
Contact Factory with other needs.
T o learn more about Honeywell Solid State E lectronics Center,
visit our web site at http://www.ssec.honeywell.com
DYNAMIC BURN-IN DIAGRAM*
STATIC BURN-IN DIAGRAM*
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
A15
CE
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
1
F18
F19
F0
F15
F12
F11
F10
F19
F9
F19
F1
F1
F1
F1
F1
F17
F16
F7
F6
F5
F4
F3
F2
F8
F13
F14
F1
F1
F1
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
A15
CE
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
1
VDD
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
NC
VDD = 5.6V, R
≤
10 K
, VIH = VDD, VIL = VSS
Ambient Temperature
≥
125
°
C, F0
≥
100 KHz Sq Wave
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.
VDD = 5.5V, R
≤
10 K
Ambient Temperature
≥
125
°
C
*40-Lead Flat Pack burn-in diagrams have similar connections and are available upon request.
HX6228
相關PDF資料 |
PDF描述 |
|---|---|
| HX6228TEFT | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHC | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHT | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENC | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENT | 128K x 8 STATIC RAM-SOI HX6228 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HX6228TEFT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENC | 制造商:HONEYWELL 功能描述:* |
| HX6228TENT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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