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參數資料
| 型號： | HX6228TEFC |
| 廠商： | Honeywell International Inc. |
| 英文描述： | 128K x 8 STATIC RAM-SOI HX6228 |
| 中文描述： | 128K的× 8靜態RAM的絕緣硅HX6228 |
| 文件頁數： | 4/12頁 |
| 文件大小： | 153K |
| 代理商： | HX6228TEFC |
HX6228
4
VDD
Supply Voltage Range (2)
-0.5
6.5
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°
C
°
C
TSOLDER
Soldering Temperature (5 Seconds)
270
PD
Maximum Power Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
Θ
JC
TJ
ESD Input Protection Voltage (4)
1500
V
Thermal Resistance (Jct-to-Case)
2
°
C/W
°
C
Junction Temperature
175
Parameter
Symbol
Units
ABSOLUTE MAXIMUM RATINGS (1)
Max
Min
Rating
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 1 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°
C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Max
Typ
Units
Description
Parameter
Min
CI
Input Capacitance
6
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
8
9
pF
VIO=VDD or VSS, f=1 MHz
Parameter
Max
Min
Symbol
Test Conditions
Worst Case
Units
CAPACITANCE (1)
(1) This parameter is tested during initial design characterization only.
Typical
Symbol
Test Conditions
Min
DATA RETENTION CHARACTERISTICS
Max
Parameter
Typical
(1)
Units
NCS=VDD=VDR
VI=VDR or VSS
VDR
Data Retention Voltage (3)
2.5
V
IDR
Data Retention Current
200
1.0
mA
NCS=VDR
VI=VDR or VSS
(1) Typical operating conditions: TA= 25
°
C, pre-radiation.
(2) Worst case operating conditions: TA= -55
°
C to +125
°
C, past total dose at 25
°
C.
(3) To maintain valid data storage during transient radiation, VDD must be held within the recommended operating range.
Worst Case
(2)
相關PDF資料 |
PDF描述 |
|---|---|
| HX6228TEFT | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHC | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHT | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENC | 128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENT | 128K x 8 STATIC RAM-SOI HX6228 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HX6228TEFT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TEHT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228TENC | 制造商:HONEYWELL 功能描述:* |
| HX6228TENT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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