- 您現在的位置：買賣IC網 > PDF目錄357918 > HX6408KBNN 512K X 8 STANDARD SRAM, 25 ns, UUC35 PDF資料下載
參數資料
| 型號： | HX6408KBNN |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| 封裝： | DIE |
| 文件頁數： | 1/10頁 |
| 文件大小： | 101K |
| 代理商： | HX6408KBNN |
Aerospace Electronics
512K x 8 STATIC RAM—SOI
Advance Information
HX6408
FEATURES
GENERAL DESCRIPTION
The 512K x 8 Radiation Tolerant Static RAM is a high
performance 524,288 word x 8-bit static random access
memory with optional industry-standard functionality. It is
fabricated with Honeywell’s radiation hardened technol-
ogy, and is designed for use in low voltage systems
operating in radiation environments. The RAM operates
over the full military temperature range and requires only a
single 3.3 V
±
0.3V power supply. Power consumption is
typically less than 9.5 mW/MHz in operation, and less than
6 mW when de-selected.
Honeywell’s enhanced SOI RICMOS V (Radiation In-
sensitive CMOS) technology is radiation hardened through
the use of advanced and proprietary design, layout and
process hardening techniques. The RICMOS V low
power process is a SIMOX CMOS technology with a 80
gate oxide and a minimum drawn feature size of 0.35
μ
m.
Additional features include tungsten via and contact plugs,
Honeywell’s proprietary SHARP planarization process
and a lightly doped drain (LDD) structure for improved short
channel reliability. A seven transistor (7T) memory cell is
used for superior single event upset hardening, while three
layer metal power busing and the low collection volume
SIMOX substrate provide improved dose rate hardening.
RADIATION
Fabricated with RICMOS V Silicon On Insulator
(SOI) 0.35
μ
m Process (L
eff
= 0.28
μ
m)
Total Dose Hardness
≥
3x10
5
rad(SiO
2
)
(Optional 1X10
6
rad(SiO
2
)
Neutron Hardness
≥
1x10
14
cm
-2
Dynamic and Static Transient Upset Hardness
≥
1x10
10
rad(Si)/s (3.3 V)
Dose Rate Survivability
≥
1x10
12
rad(Si)/s
Soft Error Rate Upsets/bit-day
≤
1x10
-10
(3.3 V)
No Latchup
OTHER
Read/Write Cycle Times
≤
20 ns, (3.3 V), 0 to 80
°
C
≤
25 ns, (3.3 V), -55 to 125
°
C
Typical Operating Power
≤
9.5 mW/MHz (3.3 V)
Asynchronous Operation
CMOS Compatible I/O
Single Power Supply, 3.3 V
±
0.3 V
Operating Range is -55
°
C to +125
°
C
Package Options:
– 36-Lead Flat Pack
Optional Low Power Sleep Mode
Solid State Electronics Center 12001 State Highway 55, Plymouth, MN 55441 (800) 238-1502 http://www.ssec.honeywell.com
相關PDF資料 |
PDF描述 |
|---|---|
| HX6408KVRM | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| HY51V17400CSLT-60 | 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 |
| HY62U8200LLST-I-10 | 256K X 8 STANDARD SRAM, 100 ns, PDSO32 |
| HY62V16100LR2-I-12 | 128K X 8 STANDARD SRAM, 120 ns, PDSO44 |
| HYM532404SLTNG-60 | 4M X 32 EDO DRAM MODULE, 60 ns, ZMA72 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HX6408KEFM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEFN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEHM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEHN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KENM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
發布緊急采購，3分鐘左右您將得到回復。