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參數資料
| 型號： | HY27SA081G1M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存 |
| 文件頁數： | 22/43頁 |
| 文件大小： | 729K |
| 代理商： | HY27SA081G1M |
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Rev 0.5 / Oct. 2004
22
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Automatic Page 0 Read Description.
At powerup, once the supply voltage has reached the threshold level, V
CCth
, all digital outputs revert to their reset
state and the internal NAND device functions (reading, writing, erasing) are enabled.
The device then automatically switches to read mode where, as in any read operation, the device is busy for a time
t
BLBH1
during the data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal goes
High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, RE, signal. Figures 18
and 19 show the power-up waveforms for devices featuring the Automatic Page 0 Read option.
Sequential Row Read Disabled
If the device is delivered with Sequential row read disabled Automatic Read Page 0 at Power-up, only the first page
(Page 0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enable), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time t
BLBH1
.
The Sequential Row Read operation can be inhibited or interrupted by de-asserting E (set to V
IH
) or by issuing a co-
mand. Refer to Figure 19.
Note: (1). V
CCth
is equal to 2.5V for 3V Power Supply devices.
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
Data
N+1
Data
N
Last
Data
Data
N+2
tBLBH1
Busy
Vccth (1)
Vcc
ALE
CLE
I/O
RE
RB
CE
WE
Data Output
from Address N to Last Byte or Word in Page
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| HY27SA161G1M | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA081G1M | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA161G1M | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27SA161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SAXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27SF081G2A-F(P) | 制造商:SK Hynix Inc 功能描述: |
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