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參數(shù)資料

型號(hào)：	HY27SA161G1M
廠商：	Hynix Semiconductor Inc.
英文描述：	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述：	1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存
文件頁數(shù)：	10/43頁
文件大小：	729K
代理商：	HY27SA161G1M

Rev 0.5 / Oct. 2004

HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Data Output

Data Output bus operations are used to read: the data in the memory array, the Status Register, the Electronic Signa-

ture and the Serial Number. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is

Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal.

See Figure 24 and Table 15 for details of the timings requirements.

Write Protect

Write Protect bus operations are used to protect the memory against program or erase operations. When the Write

Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array

cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up.

Standby

When Chip Enable is High the memory enters Standby mode, the device is deselected, outputs are disabled and power

consumption is reduced.

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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HY27SA1G1M	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SAXXX	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2A	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27SF081G2A-F(P)	制造商:SK Hynix Inc 功能描述:
HY27SF081G2M	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

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